| 摘要 |
<p>The invention relates to a microelectronic structure which provides improved protection of a hydrogen-sensitive dielectric against hydrogen contamination. According to the invention, the hydrogen sensitive dielectric ( 14 ) is covered at lest by an intermediate oxide ( 18 ), where material thickness is at lest five times the thickness of the hydrogen-sensitive dielectric. The intermediate oxide ( 18 ) simultaneously acts as an internal dielectric and is metabolized on its surface for this purpose. The intermediate oxide ( 18 ), which has a sufficient thickness absorbers the hydrogen that may be released during the deposition of a hydrogen barrier layer ( 22, 26 ), thus protecting the hydrogen-sensitive dielectric ( 14 ).</p> |
