SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREFOR

摘要

PURPOSE: A semiconductor memory device and a fabricating method therefor are provided to arrange a storage electrode on a plane by forming a wiring pad between a contact plug and a storage electrode. CONSTITUTION: A semiconductor memory device includes an interlayer dielectric(212), a storage node contact plug(216), a material layer(220), a wiring pad(218), and a storage electrode(222). The interlayer dielectric(212) having a plurality of storage node contact holes is formed on a semiconductor substrate(210). The storage node contact plug(216) is buried into the storage node contact hole. The material layer(220) has a wiring pad hole to expose the storage node contact plug(216). The wiring pad(218) is buried into the wiring pad hole. The storage electrode(222) is connected to the wiring pad(218).