| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the degradation of a gate oxide layer by using a dual gate oxide layer. CONSTITUTION: The first gate oxide layer(37) having the thickness of 1-5 nm is grown on a thin gate oxide forming portion of a semiconductor substrate(31). Nitrogen ions having the doping concentration of 1E13-1E15/cm¬2 are implanted into the first gate oxide layer(37). The second gate oxide layer is then grown on the first gate oxide layer(37) by thermal oxidation processing, thereby forming a dual gate oxide layer.
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