发明名称 Thin gate oxide output driver
摘要 An output driver circuit including first and second cascoded scaled P-channel devices coupled to first and second cascoded scaled N-channel devices. The P-channel devices are coupled together at a first node and between an output and a first source voltage having an elevated voltage level. The N-channel devices are coupled between the output and a reference source voltage. The first scaled P-channel device has a gate that receives a pull-up signal and the second scaled P-channel device has a gate coupled to a static voltage. The second P-channel device and the static voltage are configured to protect the first P-channel device from gate oxide breakdown when the first device is turned off. The first N-channel device has a gate receiving a voltage-limited pull-down signal and the second N-channel device has a gate receiving a lower voltage pull-down signal. The cascoded N-channel devices divide load and prevent hot carrier injection effects. <IMAGE>
申请公布号 EP1376874(A1) 申请公布日期 2004.01.02
申请号 EP20030253843 申请日期 2003.06.18
申请人 IP-FIRST LLC 发明人 LUNDBERG, JAMES R.
分类号 H03K19/003 主分类号 H03K19/003
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