| 摘要 |
There is discolsed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n - semiconductor layer (3) by double diffusion in corresponding relation to a p type base region (4) of an IGBT cell adjacent thereto, and an emitter electrode (9) formed on and connected to the p type semiconductor region (11) through a contact hole (CH p ) having a width (W ch2 ) which is greater than a width (W ch1 ) of a contact hole (CH 1 ), thereby preventing device breakdown due to latch-up by the operation of a parasitic thyristor during an ON state and during an ON-state to OFF-state transition even if main and control electrodes in an active region are reduced in size. The p type semiconductor region (11) has a shallow portion and a deep portion, the area of the portion of the emitter electrode (9) overlapping said deep portion being greater than the area of the portion of the emitter electrode (9) overlapping said shallow portion. |
