Memory cell and memory device

摘要

The present invention provides a memory cell having a variable resistor (Rc) as a memory element, and also provides a memory device comprising the memory cells. The variable resistor (Rc) is made of a thin-film material (for example, PCMO) or the like having a perovskite structure. So the memory cell can operate at a low voltage and can be highly integrated. The memory cell MC is formed of a combination of a current controlling device (Qc) and a variable resistor. A field-effect transistor, diode or bipolar transistor is used as the current controlling device (Qc). The current controlling device (Qc) is connected in series with the current path of the variable resistor (Rc) so as to control a current flowing through the variable resistor (Rc). <IMAGE>