发明名称 |
Electrically erasable and programable non-volatile memory cell |
摘要 |
<p>An electrically erasable and programmable non-volatile memory cell (205) integrated in a chip of semiconductor material (300) is proposed. The memory cell includes a floating gate MOS transistor (210m) having a source region (335) and a drain region (325) formed in a first well (315), a channel (340) being defined between the drain region and the source region during operation of the memory cell, a control gate region (350), and a floating gate (355) extending over the channel and the control gate region, and a bipolar transistor (215) for injecting an electric charge into the floating gate, the bipolar transistor having an emitter region (365) formed in the first well, a base region consisting of the first well, and a collector region consisting of the channel, wherein the memory cell further includes a second well (320) insulated from the first well, the control gate region being formed in the second well. <IMAGE></p> |
申请公布号 |
EP1376698(A1) |
申请公布日期 |
2004.01.02 |
申请号 |
EP20020425416 |
申请日期 |
2002.06.25 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CAPPELLETTI, PAOLO;GHEZZI, PAOLO;MAURELLI, ALFONSO;VENDRAME, LORIS;ZABBERONI, PAOLA |
分类号 |
H01L21/8247;H01L27/105;H01L29/788;(IPC1-7):H01L27/115;G11C16/04 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|