| 摘要 |
<p>A semiconductor device manufacturing method comprises the steps of forming a first conductive film (13), a ferroelectric film (14), and a second conductive film (15) on an insulating film (8), forming a hard mask (18a) on the second conductive film (15), forming a capacitor upper electrode by etching the second conductive film (15) in an area exposed from the hard mask (18a) at a first temperature, forming a capacitor dielectric film by etching the ferroelectric film (14) in the area exposed from the hard mask (18a) at a second temperature, and forming a capacitor lower electrode by etching the first conductive film (13) in the area exposed from the hard mask (18a) at a third temperature that is higher than the second temperature. <IMAGE> <IMAGE></p> |
