发明名称 Semiconductor device substrate and method of manufacturing semiconductor device
摘要 It is an object of the present invention to provide a semiconductor device substrate and a method of manufacturing the same and a method of manufacturing a semiconductor device for supporting a smaller size and a lighter weight in semiconductor devices, by removing disadvantages such as variations in resin thickness due to resin flows, warps in the substrate, cracking in the substrate, and foams contained in the resin when a semiconductor device is manufactured. A frame is formed in the outermost portion of a base of the substrate, and in an area surrounded by the frame, the base is provided with externally guiding electrodes. Each of the externally guiding electrode comprises an element connecting electrode provided at regular intervals, an external device connecting electrode provided at regular intervals on the back surface of the substrate, and a via hole connecting both of the electrodes. Semiconductor elements are disposed and fixed onto the area of the base surrounded by the frame, and connected to the element connecting electrodes, respectively. Then, a resin is applied in the area surrounded by the frame at a thickness substantially the same as the height of the frame, and the semiconductor elements are individually cut after the resin is cured. <IMAGE>
申请公布号 EP1120823(A3) 申请公布日期 2004.01.02
申请号 EP20000128242 申请日期 2000.12.21
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. 发明人 HOTOZUKA, KOUICHI;NOMURA, YUKIO
分类号 H01L23/13;H01L21/56;H01L23/31 主分类号 H01L23/13
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