| 发明名称 |
Memory structures |
| 摘要 |
<p>A memory structure that includes a control element electrode (35), a heater electrode (39), a memory element electrode (33), a chalcogenide based memory element (23) disposed between the memory element electrode and the heater electrode, and a control element (25) disposed between the heater electrode and the control element electrode. <IMAGE></p> |
| 申请公布号 |
EP1376604(A1) |
申请公布日期 |
2004.01.02 |
| 申请号 |
EP20030253639 |
申请日期 |
2003.06.10 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
FRICKE, PETER;KOLL, ANDREW;VAN BROCKLIN, ANDREW L. |
| 分类号 |
H01L27/10;G11C16/02;H01L27/105;H01L27/24;(IPC1-7):G11C11/34;H01L45/00 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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