| 发明名称 |
DEPOSITION METHOD, DEPOSITION APPARATUS, INSULATING FILM AND SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
<p>To provide a method and an apparatus for forming a film capable of forming a boron-carbon-nitrogen film. <??>The method for forming the film comprises the steps of generating a plasma 50 in a cylindrical container 1, mainly exciting nitrogen atoms in the container 1, then reacting boron with carbon, and forming the boron-carbon-nitrogen film 61 on a substrate 60. <IMAGE></p> |
| 申请公布号 |
EP1376672(A1) |
申请公布日期 |
2004.01.02 |
| 申请号 |
EP20020705474 |
申请日期 |
2002.03.25 |
| 申请人 |
KABUSHIKI KAISHA WATANABE SHOKO;SUGINO, TAKASHI |
发明人 |
SUGINO, TAKASHI;KUSUHARA, MASAKI;UMEDA, MASARU |
| 分类号 |
C23C16/509;C23C16/38;C23C16/36;C23C16/452;H01L21/31;H01L21/314;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):H01L21/318 |
主分类号 |
C23C16/509 |
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