发明名称 |
FABRICATION OF HIGH RESISTIVITY STRUCTURES USING FOCUSED ION BEAMS |
摘要 |
The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam toward an impact point on the target and directing a precursor gas toward the impact point, the ion beam causing the precursor gas to decompose and thereby deposit a structure exhibiting high resistivity onto the target. The precursor gas preferably contains a first compound that would form a conductive layer and a second compound that would form an insulating layer if each of the first and second compounds were applied alone in the presence of the ion beam. |
申请公布号 |
EP1374294(A2) |
申请公布日期 |
2004.01.02 |
申请号 |
EP20020705943 |
申请日期 |
2002.01.25 |
申请人 |
FEI COMPANY |
发明人 |
BASSOM, NEIL, J.;MAI, TUNG |
分类号 |
C23C16/48;C23C16/04;H01L21/02;H01L21/285;(IPC1-7):H01L21/44;H01L21/31;H01L21/469 |
主分类号 |
C23C16/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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