Method and design for measuring SRAM array leakage macro (ALM)

摘要

A method and structure for a test structure that has an array of cells connected together by conductive lines. The conductive lines connect the cells together as if they were a single cell. The conductive lines can include common word line; a common bit line; a common bit line complement line, a common N-well voltage line, a common interior ground line, a common interior voltage line, and/or a common ground line.