发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method is provided for manufacturing a semiconductor device having a high breakdown voltage transistor and a low breakdown voltage transistor with different driving voltages provided in a common layer. The method includes: (a) implanting an impurity of a second conductivity type in a specified region of a semiconductor layer of a first conductivity type to form a first well; (b) implanting an impurity of the second conductivity type in a specified region of the semiconductor layer to form a second well having an impurity concentration different from the first well; and (c) implanting an impurity of the first conductivity type in a specified region of the first well to form a third well.
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申请公布号 |
US2004002201(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20030394448 |
申请日期 |
2003.03.21 |
申请人 |
HAYASHI MASAHIRO |
发明人 |
HAYASHI MASAHIRO |
分类号 |
H01L21/761;C30B1/00;H01L21/20;H01L21/425;H01L21/82;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;(IPC1-7):C30B1/00 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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