Laser having active region formed above substrate

摘要

A semiconductor laser. The semiconductor laser has an indium-phosphide (InP) non-(100) substrate and an active region grown above the substrate. In so doing, embodiments of the present invention provide for the formation of a semiconductor laser with good morphology and low contamination while allowing the use of wide process windows. Opening the process window greatly simplifies the formation process, leads to more consistent results, and achieves better yields under mass production.