| 摘要 |
A switching point detection circuit for detecting a switching point according to a fabrication condition of MOS transistor, includes a reference voltage generation unit for generating a reference voltage, a first CMOS inverter, in which an NMOS transistor is dominant for the reference voltage, receiving the reference voltage and a second CMOS inverter, in which a PMOS transistor is dominant for the reference voltage, receiving the reference voltage.
|
