发明名称 |
MAGNETIC TUNNEL JUNCTION CONTAINING A FERRIMAGNETIC LAYER AND ANTI-PARALLEL LAYER |
摘要 |
A magnetic tunnel junction device is provided that includes a free layer and a pinned layer separated by a barrier layer. According to the invention, the free layer includes a ferrimagnetic layer and an anti-parallel layer having a magnetic moment that is substantially anti-parallel to a magnetic moment of the ferrimagnetic layer at least within a predetermined temperature range of the magnetic tunnel junction device. A memory array that includes such a magnetic tunnel junction is also provided.
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申请公布号 |
US2004001350(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20020185659 |
申请日期 |
2002.06.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABRAHAM DAVID W.;TROUILLOUD PHILIP L. |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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