发明名称 Method and system for forming a semiconductor device
摘要 The invention includes a method and system for forming a semiconductor device. The invention involves the utilization of a stamping tool to generate three-dimensional resist structures whereby thin film patterning steps can be transferred to the resist in a single molding step and subsequently revealed in later processing steps. Accordingly, the alignments between successive patterning steps can be determined by the accuracy with which the stamping tool has been fabricated, regardless of the dilations or contractions that can take place during the fabrication process. A first aspect of the invention includes a method for forming a semiconductor device. The method comprises providing a substrate, depositing a first layer of material over the substrate and forming a 3-dimensional (3D) resist structure over the substrate wherein the 3D resist structure comprises a plurality of different vertical heights throughout the structure. A second aspect of the invention includes a system for forming a semiconductor device comprising means for depositing a first layer of material over a flexible substrate, means for depositing a layer of resist over the flexible substrate, means for transferring a 3D pattern to the layer of resist to form a 3D layer of resist over the flexible substrate and means for utilizing the 3D layer of resist to form a cross-point array over the flexible substrate.
申请公布号 US2004002216(A1) 申请公布日期 2004.01.01
申请号 US20020184567 申请日期 2002.06.28
申请人 TAUSSIG CARL PHILIP;MEI PING 发明人 TAUSSIG CARL PHILIP;MEI PING
分类号 B41C3/00;B81C1/00;B81C99/00;G03F7/00;H01L21/00;H01L21/027;H01L21/033;H01L21/302;H01L21/308;H01L21/311;H01L51/40;(IPC1-7):H01L21/311 主分类号 B41C3/00
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