发明名称 Plasma etch chamber equipped with multi-layer insert ring
摘要 A multi-layer insert ring for engaging a shadow ring in a plasma etch chamber which includes at least two layers stacked together in an opening of the shadow ring. The multi-layer insert ring may be constructed by two layers or three layers by utilizing ground, reprocessed insert rings resulting in significant cost savings. Each of the layers of the multi-layer insert rings has a planar top surface and a planar bottom surface that is parallel to the planar top surface. Only the top layer need to be replaced after repeated usage of the insert ring in plasma etching processes.
申请公布号 US2004000375(A1) 申请公布日期 2004.01.01
申请号 US20020184606 申请日期 2002.06.27
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIU HSIANG-HSING;HUANG CHUNG-FENG;FAN YANG-KAI;TAN KWANG-NIANG;TSENG WEN-CHIN
分类号 H01J37/32;H01L21/306;(IPC1-7):H01L21/306 主分类号 H01J37/32
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