发明名称 |
Plasma etch chamber equipped with multi-layer insert ring |
摘要 |
A multi-layer insert ring for engaging a shadow ring in a plasma etch chamber which includes at least two layers stacked together in an opening of the shadow ring. The multi-layer insert ring may be constructed by two layers or three layers by utilizing ground, reprocessed insert rings resulting in significant cost savings. Each of the layers of the multi-layer insert rings has a planar top surface and a planar bottom surface that is parallel to the planar top surface. Only the top layer need to be replaced after repeated usage of the insert ring in plasma etching processes.
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申请公布号 |
US2004000375(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20020184606 |
申请日期 |
2002.06.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU HSIANG-HSING;HUANG CHUNG-FENG;FAN YANG-KAI;TAN KWANG-NIANG;TSENG WEN-CHIN |
分类号 |
H01J37/32;H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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