| 摘要 |
Alignment marks of a semiconductor device, formed prior to a step of applying heat treatment in an oxygen atmosphere, comprise an insulating film, a groove formed in the insulating film in the step of defining a contactor hole in a device part, a metal film formed at least on sidewalls of the groove in the step of burying the contactor hole in the device part, and a cover film formed on the insulating film, covering the metal film formed in the groove for prevention of oxidation of the metal film during heat treatment applied in an oxygen atmosphere.
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