发明名称 |
Method for fabricating a nitrided silicon-oxide gate dielectric |
摘要 |
A method of fabricating a gate dielectric layer. The method comprises: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; exposing the silicon dioxide layer to a plasma nitridation to convert the silicon dioxide layer into a silicon oxynitride layer; and performing a spiked rapid thermal anneal of the silicon oxynitride layer.
|
申请公布号 |
US2004002226(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20020187572 |
申请日期 |
2002.07.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BURNHAM JAY S.;CHOU ANTHONY I.;FURUKAWA TOSHIHARU;GIBSON MARGARET L.;NAKOS JAMES S.;SHANK STEVEN M. |
分类号 |
H01L21/318;H01L21/28;H01L21/314;H01L21/324;H01L21/336;H01L29/49;H01L29/51;H01L29/78;H01L29/786;(IPC1-7):H01L21/336;H01L21/31;H01L21/469 |
主分类号 |
H01L21/318 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|