发明名称 |
Circuit with buried strap including liner |
摘要 |
Semiconductor devices having trenches with buried straps therein preventing lateral out-diffusion of dopant are provided along with methods of fabricating such semiconductor devices.
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申请公布号 |
US2004000683(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20030438352 |
申请日期 |
2003.05.14 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
JAIPRAKASH VENKATACHALAM C.;RANADE RAJIV |
分类号 |
H01L21/8242;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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