发明名称 Circuit with buried strap including liner
摘要 Semiconductor devices having trenches with buried straps therein preventing lateral out-diffusion of dopant are provided along with methods of fabricating such semiconductor devices.
申请公布号 US2004000683(A1) 申请公布日期 2004.01.01
申请号 US20030438352 申请日期 2003.05.14
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 JAIPRAKASH VENKATACHALAM C.;RANADE RAJIV
分类号 H01L21/8242;(IPC1-7):H01L27/108 主分类号 H01L21/8242
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