| 摘要 |
A semiconductor optical modulator of an electroabsorption type includes a light absorption layer (12) for generating a modulated light beam by absorbing an incident light beam (L1). A well layer (18) is formed in the light absorption layer, and the carriers generated by the light absorption layer are accumulated in the well layer and guided and released from the well layer upon receipt of an incident excitation light beam (L2) of a wavelength corresponding to the bandgap energy of the well layer. The incident light beam is modulated by use of changes in absorption coefficient under an externally applied voltage based on the Franz-Keldysh effect or the quantum confined Stark effect, thus allowing to respond to high-intensity incident light beam at high frequency, free from deterioration of extinction characteristics, having good transmission characteristics.
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