发明名称 |
Method for repairing memory cell |
摘要 |
A method for repairing a memory cell having a plurality of bit lines. The memory cell is tested with a compression testing mode, and future testing is set to compression testing mode when an error is detected, or to normal testing mode when no error is detected. It is determined whether detected errors warrant repair, and all repairs deemed necessary are performed.
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申请公布号 |
US2004001369(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20030457507 |
申请日期 |
2003.06.09 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHANG CHIN-MIN;SHEN YU-LIN;WU CHENG-CHENG |
分类号 |
G11C29/00;G11C29/40;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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