发明名称 |
Fluxless bumping process using ions |
摘要 |
A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4, SF4, and H2 and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device. |
申请公布号 |
US2004000580(A1) |
申请公布日期 |
2004.01.01 |
申请号 |
US20020184182 |
申请日期 |
2002.06.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE HSIN-HUI;LIN CHIA-FU;SU CHAO-YUAN;CHEN YENG-MING;CHING KAI-MING;CHEN LI-CHIH;TIEN HAO-CHIH |
分类号 |
B23K1/008;H01L21/48;H01L21/60;H05K3/34;(IPC1-7):B23K31/02 |
主分类号 |
B23K1/008 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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