| 发明名称 |
High density 3D rail stack arrays and method of making |
| 摘要 |
A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation. |
| 申请公布号 |
US2004000679(A1) |
申请公布日期 |
2004.01.01 |
| 申请号 |
US20020180046 |
申请日期 |
2002.06.27 |
| 申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
PATEL KEDAR;ILKBAHAR ALPER;SCHEUERLEIN ROY;WALKER ANDREW J. |
| 分类号 |
H01L21/8239;H01L27/088;H01L27/092;H01L27/105;(IPC1-7):H01L29/76;H01L27/148;H01L29/768 |
主分类号 |
H01L21/8239 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
