| 摘要 |
1,167,063. Photo-electric information transmission path. SIEMENS A. G. May 9, 1967 [May 10, 19661, No. 21463/67. Heading G1A. [Also in Division H1] The gate electrode and insulation of an IGFET are made optically transparent so that the output of the transistor may be modulated by light reaching the channel formed by a standing gate bias. In one unit light reaches the transistor through a lens in its housing. In another a light emitting diode is mounted in a common housing with the transistor. The semi-conductor may be silicon, germanium, or gallium arsenide. The gate insulation may be silicon, silicon monoxide, calcium fluoride, or alumina. The gate electrode may be tin oxide, indium oxide, calcium oxide, or zinc oxide - a circumferential contact body is provided. A gallium arsenide diode may be used with a silicon transistor. |
