| 摘要 |
1,167,305. Semi-conductor devices. MOTOROLA Inc. 9 April, 1968 [25 April, 1967], No. 17009/68. Heading H1K. A method of manufacture of a semi-conductor device comprises lapping a semi-conductor wafer 10 down to less than 1 mil thickness, applying a layer of molten glass 12 between, the wafer and a handle wafer 14 and allowing the glass to cool to firmly bind these two wafers together, forming PN junctions in the wafer 10 as required and finally removing the glass and handle wafer. The semi-conductor wafer 10 may then be scribed into separate dice which can be mounted on headers. The glass used has a thermal expansion characteristic which is substantially the same as that of the semi-conductor material, and may be in the form of a powder mixed with a volatile diluent such as glycerol or a glycol. It may be a silicate glass comprising silicon dioxide and aluminium oxide with quantities of one or more alkaline earth oxides. It is removed from the semi-conductor wafer 10 by etching as with hydrofluoric acid. In an alternative embodiment, Fig. 11, not shown, slots are etched in the semi-conductor wafer (30) prior to the application of the glass binding layer, and the unetched surface of the wafer is lapped away to expose the slots on this surface also, when the semi-conductor material will form islands in the glass layer. PN junctions are formed in these islands and interconnected by metal strips which also serve to support the devices after the removal of the glass.
|
