| 摘要 |
PURPOSE: A pixel array region of an image sensor, its structure, and a method for manufacturing the same are provided to be capable of preventing blooming phenomenon and restraining malfunction by using a bypass device connected with a photo diode of each pixel. CONSTITUTION: A pixel array region(50) of an image sensor includes a plurality of pixels that are two-dimensionally arrayed along rows and columns. At this time, each pixel includes a photo diode(PD), at least one switching device connected with the photo diode in series, and a bypass device(DBP). Preferably, one terminal of the bypass device is connected with the photo diode and the other terminal is connected with a power supply(VDD).
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