Sidewall spacer structure for self-aligned contact and method for forming the same

摘要

A spacer layer (70) formed between the adjacent conductive patterns (55) comprising bit line (50) and capping layer (60) is etched through interlayer insulation film (20) and another spacer layer (80) is used as mask to form single layer spacer on side walls of conductive patterns. Independent claims are also included for the following: (1) semiconductor memory formation method; (2) semiconductor device; and (3) semiconductor memory.