METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve an isolation characteristic by controlling an increase in a leakage current of an insulation layer in a trench and by maintaining intrinsic resistance of the insulation layer in the trench. CONSTITUTION: A sacrificial layer pattern for exposing a field region is formed on a semiconductor substrate(10). The field region of the semiconductor substrate is etched by a desired depth to form a trench(15) by using the sacrificial layer pattern as an etch mask. An oxide layer(17) is formed on the etched surface of the semiconductor substrate of the trench. An ion implantation layer(27) is formed on the etched surface of the semiconductor substrate of the trench to reduce an isolation leakage current. An insulation layer is filled in the trench.