METHOD FOR MANUFACTURING THIN FILM TRANSISTOR(TFT)

摘要

PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) is provided to be capable of minimizing the number of grain boundary for improving the operation characteristics of the TFT by maximizing the grain size of a channel polysilicon layer. CONSTITUTION: After forming an interlayer dielectric(12) at the upper portion of a semiconductor substrate(11), the first polysilicon layer(13) is formed at the upper portion of the resultant structure. Then, a gate is formed by selectively patterning the first polysilicon layer. After sequentially forming a gate oxide layer(14) and an amorphous silicon layer(15) on the entire surface of the resultant structure, an RTA(Rapid Thermal Annealing) process is carried out at the resultant structure for transforming the amorphous silicon layer into the second polysilicon layer(16). Then, a channel region(17) and a junction region(18) are formed at the predetermined portions of the second polysilicon layer by carrying out predetermined ion implantation processes.