METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of increasing dry speed, and preventing the growth of a metal grain and the formation of a metal oxide layer by applying hot gas to a spin dry process after carrying out a metal line CMP(Chemical Mechanical Polishing) process. CONSTITUTION: A damascene pattern made of a via contact hole and a trench, is formed at the inner portion of an interlayer dielectric(102). A diffusion barrier(105) is formed on the entire surface of the resultant structure. A metal line layer(107) is formed at the upper portion of the diffusion barrier. A CMP process is carried out at the metal line layer until the upper surface of the interlayer dielectric is exposed. A post cleaning process including a spin dry process with hot gas, is carried out at the resultant structure for increasing dry speed and removing particles existing on the upper surface of the resultant structure.