| 摘要 |
PURPOSE: A process for easily forming PZT thin film having a desired composition from a single mixed solution is provided. CONSTITUTION: The process of PZT (lead zirconate titanate) thin film comprises the process of depositing the vaporized single mixed precursor solution on a substrate in the temperature range of 360 to 560 deg.C after vaporizing a single mixed precursor solution comprising Pb(methd)2 represented as in the following Formula 1, Zr(methd)4 represented as in the following Formula 2 and Ti(mpd)(methd)2 represented as in the following Formula 3, wherein a composition ratio of metal precursor material in the mixed precursor solution, £Pb/(Zr+Ti)|, is in the range of 0.4 to 1.1, wherein a mixing ratio of Zr:Ti is in the range of 3:7 to 5:5, wherein the mixed precursor solution is prepared by dissolving precursor materials into an organic solvent selected from n-heptane, n-octane, tetrahydrofuran (THF) and a mixture thereof, wherein the substrate is selected from Si, Pt, Ir, Ru, IrO2 and RuO2, and wherein vaporization process is performed in the temperature range of 200 to 300 deg.C.
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