发明名称
摘要 PURPOSE: An LED(Light Emitting Diode) and a method for manufacturing the same are provided to improve an optical output by emitting lights into a substrate instead of an upper clad layer and by forming a reflective film on an ohmic contact layer. CONSTITUTION: A first clad layer(13) made of N-type GaN is formed on a transparent substrate(11). An active layer(14) is formed on the first clad layer. A second clad layer(15) of P-type GaN is formed on the active layer. An ohmic contact layer(16) is formed on the second clad layer. A reflective film(17) is formed on the ohmic contact layer to reflect lights generated in the active layer. An electrode pad(18) is formed on a desired portion of the first clad layer. The reflective film(17) is made of Ag/Ni/Au or Ag/Pt/Au.
申请公布号 KR100413435(B1) 申请公布日期 2003.12.31
申请号 KR20010017443 申请日期 2001.04.02
申请人 发明人
分类号 H01L33/00;H01L33/10;H01L33/12 主分类号 H01L33/00
代理机构 代理人
主权项
地址