SENSORS BASED ON GIANT PLANAR HALL EFFECT IN DILUTE MAGNETIC SEMICONDUCTORS
摘要
Ferromagnetic semiconductor-based sensor devices, including sensors for detecting pressure changes and sensors for detecting magnetic fields, such as switching events in a magnetic recording medium. The pressure sensors of the present invention detect pressure changes using magnetoresistive measurement techniques, and in particular GPHE techniques. Magnetic field detection sensors such as magnetic switching detection sensors include ferromagnetic semiconductor-based materials that provide enhanced sensitivity relative to known materials and techniques. Such magnetic switching detection sensors according to the present invention are particularly useful as a read head sensor for HDD and other magnetic storage technologies.
申请公布号
WO2004001805(A2)
申请公布日期
2003.12.31
申请号
WO2003US19863
申请日期
2003.06.23
申请人
CALIFORNIA INSTITUTE OF TECHNOLOGY;TANG, HONGXING;ROUKES, MICHAEL, L.