PHOTO MASK, FABRICATING METHOD THEREOF AND METHOD FOR FABRICATING PHOTORESIST LAYER USING THE SAME

摘要

PURPOSE: A photo mask is provided to uniformly fabricate a photoresist layer pattern by forming a photo mask while using a mask layer and a phase shift layer and by changing a mask pattern. CONSTITUTION: The photo mask(120) has an exposure region(116) of an isolated pattern type. The mask layer(114) is formed in the whole peripheral region of a short side of the exposure region and in a predetermined portion of a peripheral region of the long side of the exposure region. The phase shift layer(112) is formed in the peripheral region of the long side except the predetermined region wherein the mask layer is formed.