| 摘要 |
PURPOSE: A method for fabricating a metal plug of a semiconductor device is provided to form a metal plug with no void even in a deep contact hole by burying a void while using a spin-on-glass(SOG) material such that the void is generated when tungsten is not completely buried. CONSTITUTION: After an interlayer dielectric(120) is formed on a semiconductor substrate(100) having a gate electrode, a contact hole is formed by an exposure process and an etch process. A barrier layer(140) is formed on the resultant structure including the contact hole. The first metal layer(150) is deposited by a chemical vapor deposition method so that a void with an opening is formed inside the contact hole. The SOG material(160) is deposited on the resultant structure to fill the void with the opening. The deposited SOG material is etched back to eliminate even the upper portion of the void with the opening. After the second metal layer(170) is deposited on the resultant structure, an etch-back process is performed to planarize even the upper portion of the interlayer dielectric.
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