| 摘要 |
A method of polishing an organic insulating film superimposed on a semiconductor substrate at a high polishing rate while inhibiting the occurrence of crack, scratch, film detachment, etc. An organic insulating film of semiconductor integrated circuit which is comprised of an aromatic polymer and has preferably a dielectric constant of 3.5 or less is polished with a polishing agent composition comprising a polishing abrasive, water and an alcohol and preferably further comprising a thickner. |
