FLOATING GATE OF FLASH MEMORY AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a floating gate of a flash memory is provided to easily perform a dry etch process by decreasing the height of a conductive layer for the floating gate, and to guarantee a process regarding alignment between the floating gate and an active region in a photolithography process by etching the conductive layer and completely separating the conductive layer in a subsequent etch process. CONSTITUTION: A conductive layer and a passivation layer are sequentially formed on a semiconductor substrate(100) including an isolation layer(105) and a gate oxide layer(101). While a part of the lower portion of the conductive layer is left, the passivation layer and the conductive layer on the isolation layer are slantingly etched to form a trench whose width becomes narrow as it goes to the bottom of the trench. A spacer insulation layer is formed on the passivation layer and the bottom and inner wall of the trench. While the conductive layer is protected by the passivation layer, the spacer insulation layer is etched to form a spacer on the inner wall of the trench. The exposed conductive layer is etched and separated by using the passivation layer and the spacer as a mask. The passivation layer and the spacer are eliminated.