发明名称 ION SOURCE FOR ION INJECTION SYSTEM
摘要 PURPOSE: An ion source is provided to achieve improved efficiency of ionization and reduce a gas consumption by enhancing the reaction gas supply structure. CONSTITUTION: An ion source(110) comprises an arc chamber(112) supplied with gas through a gas line; a first electrode installed in the arc chamber; and a second electrode opposed to the first electrode. The arc chamber has an injection nozzle(120) connected to the gas line. The injection nozzle improves speed of gas injection and permits gas to be uniformly injected all over the arc chamber.
申请公布号 KR20030097284(A) 申请公布日期 2003.12.31
申请号 KR20020034584 申请日期 2002.06.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, SANG GUK
分类号 H01J37/08;(IPC1-7):H01J37/30 主分类号 H01J37/08
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