METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of preventing the generation of crack. CONSTITUTION: After forming an insulating layer(120) at the upper portion of a semiconductor substrate(100), an opening portion is formed at the predetermined portion of the insulating layer by carrying out an etching process for exposing the upper surface of the semiconductor substrate. The first conductive layer(140) made of the first material having the first stress, is formed on the entire surface of the resultant structure. Then, the second conductive layer(150) made of the second material having the second stress, is formed on the entire surface of the first conductive layer. Preferably, TiN or WN is used as the first material and the other material out of the two is used as the second material.