| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of reducing the burial depth of an oxide layer for forming the isolation layer without voids by carrying out a double etching process. CONSTITUTION: After forming the first pad layer at the upper portion of a semiconductor substrate(100), the first trench(120) is formed by selectively removing the resultant structure. After forming the first oxide layer on the entire surface of the resultant structure for filling the first trench, the first isolation region(130a) is formed by carrying out a CMP(Chemical Mechanical Polishing) process at the first oxide layer and removing the first pad layer. Then, a substrate role layer(200) and the second pad layer are sequentially formed at the resultant structure. The second trench(220) is formed to connect the first isolation region by selectively etching the second pad layer and the substrate role layer. After forming the second oxide layer at the resultant structure, the second isolation region(230a) is formed by using predetermined processes.
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