METHOD FOR MANUFACTURING TRENCH ISOLATION IN SEMICONDUCTOR DEVICE AND THEREOF STRUCTURE

摘要

PURPOSE: A method for manufacturing trench isolation in semiconductor device and thereof structure are provided to be capable of restraining the generation of voids at the inner portion of a trench and improving junction leakage current characteristic. CONSTITUTION: After sequentially forming a pad oxide layer and a nitride layer at the upper portion of a semiconductor substrate(100), an etching mask is formed by patterning the nitride layer and the pad oxide layer. A trench is formed by etching the semiconductor substrate along the etching mask. An oxide layer(108) is formed at the inner wall of the trench by carrying out the first oxidation process at the trench. An oxygen implant region is formed at the predetermined inner portion of the semiconductor substrate by carrying out an oxygen implanting process at the semiconductor substrate. After carrying out a gap-fill process for filling the trench with insulating material, the oxygen implant region is transformed into an oxidation region(116a) by carrying out the second oxidation process.