发明名称 METHOD FOR MANUFACTURING ANTI REFLECTION COATING FOR THE PHOTO-RESIST PATTERN TO BE FORM PRECISELY
摘要 PURPOSE: A method for manufacturing an anti reflection coating for the photo-resist pattern to be form precisely is provided to be capable of exactly embodying the line width of the photoresist pattern by using a nitride oxide layer as the anti reflection coating. CONSTITUTION: After forming a metal layer(202) at the upper portion of a lower oxide layer, an anti reflection coating(204) is deposited at the upper portion of the meal layer. Then, a photoresist layer(208) is coated on the entire surface of the resultant structure. After selectively patterning the photoresist layer by carrying out a photolithography process and an etching process, the anti reflection coating is selectively etched by using the patterned photoresist layer as an etching mask. Then, the metal layer is etched by using the anti reflection coating as a hard mask. Preferably, a nitride oxide layer is used as the anti reflection coating.
申请公布号 KR20030096765(A) 申请公布日期 2003.12.31
申请号 KR20020033780 申请日期 2002.06.17
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 KIM, DEOK SU
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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