METHOD FOR FABRICATING METAL CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal contact of a semiconductor device is provided to avoid a residual metal layer and prevent a bridge phenomenon by using SF6/N2 gas when a metal layer is etched back to form the metal contact. CONSTITUTION: After an interlayer dielectric(102) is formed on a semiconductor substrate(100), the interlayer dielectric is exposed and patterned to form a metal contact plug. A barrier metal(104) is thinly formed on the metal contact plug. The metal layer(106) is formed to fill the metal contact plug. The metal layer filled in the metal contact plug is etched back to form the metal contact by using SF6/N2 gas. A metal line(108) is formed on the interlayer dielectric including the meal contact.