| 摘要 |
PURPOSE: A chemical mechanical polishing(CMP) process is provided to easily shorten a time interval of a CMP process and simplify equipment by continuously performing a polishing process and a buffering process over a platen. CONSTITUTION: A predetermined thickness of a polishing target material is eliminated by a chemical reaction using slurry and a mechanical process using a polishing pad(22). The slurry on a wafer(30) is removed by mechanical friction of deionized water and the polishing pad. The slurry and polishing byproducts remaining on the wafer is removed by using chemicals. While the wafer is disposed on a single platen(21), the polishing process is performed by using the slurry and the polishing pad and the buffering process is performed by using deionized water and the polishing pad.
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