发明名称 |
Protective layer for a semiconductor device |
摘要 |
A semiconductor device comprises at least one first semiconductor layer (1-4) and a second layer (8) applied on at least a surface portion of the first layer for protecting the device. The protecting layer is of a second material having a larger energy gap between the valence band and the conduction band than a first material forming said first layer. The second material has at least in one portion of said protecting layer a nano-crystalline and amorphous structure by being composed of crystalline gains with a size less than 100 nm and a resistivity at room temperature exceeding 1x10<10 >Omegacm. |
申请公布号 |
US6670705(B1) |
申请公布日期 |
2003.12.30 |
申请号 |
US20020070968 |
申请日期 |
2002.06.25 |
申请人 |
ACREO AB |
发明人 |
HARRIS CHRISTOPHER;BAKOWSKI MIETEK;SZMIDT JAN |
分类号 |
H01L21/316;H01L21/318;H01L23/29;H01L23/31;H01L29/861;(IPC1-7):H01L23/14;H01L23/06;H01L23/10;H01L23/15;H01L23/12 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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