发明名称 |
Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same |
摘要 |
A single electron memory device including quantum dots between a gate electrode and a single electron storage element and a method for manufacturing the same, wherein the single electron memory device includes a substrate on which a nano-scale channel region is formed between a source and a drain, and a gate lamination pattern including quantum dots on the channel region. The gate lamination pattern includes a lower layer formed on the channel region, a single electron storage medium storing a single electron tunneling through the lower layer formed on the lower layer, an upper layer including quantum dots formed on the single electron storage medium, and a gate electrode formed on the upper layer to be in contact with the quantum dots.
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申请公布号 |
US6670670(B2) |
申请公布日期 |
2003.12.30 |
申请号 |
US20020125597 |
申请日期 |
2002.04.19 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHAE SOO-DOO;KIM BYONG-MAN;KIM MOON-KYUNG;CHAE HEE-SOON;RYU WON-IL |
分类号 |
G11C16/04;H01L21/28;H01L21/8247;H01L27/10;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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