发明名称 |
Process for forming high temperature stable self-aligned metal silicide layer |
摘要 |
A process for forming high temperature stable self-aligned suicide layer that not only establishes itself smoothly and uniformly despite the use of a high temperature in the siliciding reaction, but also can withstand other subsequent high temperature thermal processing operations and maintaining a stable metal silicide layer profile thereafter. Moreover, desired thickness and uniformity of the metal suicide layer can be obtained by suitably adjusting the amorphous implant parameters, while the use of a titanium nitride cap layer help to stabilize the metal silicide layer during high temperature formation and that a stable and uniform metal suicide layer profile can be ensured even if subsequent high temperature processing operations are performed.
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申请公布号 |
US6670249(B1) |
申请公布日期 |
2003.12.30 |
申请号 |
US20000686879 |
申请日期 |
2000.10.12 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
PAN HONG-TSZ;CHEN TUNG-PO |
分类号 |
H01L21/285;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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